BUK7Y25-40B NXP Semiconductors, BUK7Y25-40B Datasheet - Page 5
![MOSFET, N CH, 40V, 35.3A, LFPAK](/photos/22/17/221780/756424404-40_sml.jpg)
BUK7Y25-40B
Manufacturer Part Number
BUK7Y25-40B
Description
MOSFET, N CH, 40V, 35.3A, LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7Y25-40B115.pdf
(14 pages)
Specifications of BUK7Y25-40B
Transistor Polarity
N Channel
Continuous Drain Current Id
35.3A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.02ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7Y25-40B
Product data sheet
Symbol
R
Fig 4.
Fig 5.
th(j-mb)
Z
(K/W)
th (j-mb)
(A)
I
D
10
10
10
10
10
10
10
-1
-1
-2
3
2
1
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
1
-6
Thermal characteristics
δ = 0.5
0.05
0.02
0.2
0.1
single shot
Parameter
thermal resistance
from junction to
mounting base
Limit R
10
-5
DSon
= V
DS
/ I
D
Conditions
see
All information provided in this document is subject to legal disclaimers.
10
-4
Figure 5
Rev. 04 — 7 April 2010
DC
10
10
-3
N-channel TrenchMOS standard level FET
10
-2
BUK7Y25-40B
Min
-
V
DS
10
P
10μ s
100μ s
1ms
10ms
100ms
-1
(V)
t
Typ
-
p
T
t
p
© NXP B.V. 2010. All rights reserved.
(s)
003aac618
003aac483
δ =
Max
2.53
t
T
p
t
10
1
2
Unit
K/W
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