BUK9Y19-75B NXP Semiconductors, BUK9Y19-75B Datasheet

MOSFET, N CH, 75V, 48.2A, LFPAK

BUK9Y19-75B

Manufacturer Part Number
BUK9Y19-75B
Description
MOSFET, N CH, 75V, 48.2A, LFPAK
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK9Y19-75B

Transistor Polarity
N Channel
Continuous Drain Current Id
48.2A
Drain Source Voltage Vds
75V
On Resistance Rds(on)
0.0147ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.65V
Rohs Compliant
Yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK9Y19-75B
Manufacturer:
EVERLIGHT
Quantity:
40 000
Part Number:
BUK9Y19-75B
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V, 24 V and 42 V loads
Automotive systems
DC-to-DC converters
Engine management
BUK9Y19-75B
N-channel TrenchMOS logic level FET
Rev. 04 — 13 April 2010
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
T
V
T
V
T
j
mb
j
j
GS
GS
GS
≥ 25 °C; T
= 25 °C; see
= 25 °C
Figure
= 25 °C; see
= 5 V; T
= 5 V; I
= 10 V; I
1; see
D
mb
j
D
≤ 175 °C
= 20 A;
= 20 A;
= 25 °C;
Figure 13
Figure 2
Figure 4
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
Transmission control
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
15.9 19
14.7 18
Max Unit
75
48.2 A
106
V
W
mΩ
mΩ

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BUK9Y19-75B Summary of contents

Page 1

... BUK9Y19-75B N-channel TrenchMOS logic level FET Rev. 04 — 13 April 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... see Figure 14 Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 All information provided in this document is subject to legal disclaimers. Rev. 04 — 13 April 2010 BUK9Y19-75B N-channel TrenchMOS logic level FET Min ≤ sup = °C; j Graphic symbol G mbb076 ...

Page 3

... Figure °C mb ≤ 10 µs; pulsed ° ≤ Ω 48 sup °C; unclamped GS j(init) see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 04 — 13 April 2010 BUK9Y19-75B N-channel TrenchMOS logic level FET Min Typ Max - - - 48 34 192 - - 106 ...

Page 4

... T (°C) mb Fig ( All information provided in this document is subject to legal disclaimers. Rev. 04 — 13 April 2010 BUK9Y19-75B N-channel TrenchMOS logic level FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature 003aac488 (1) (2) ( (ms) AL 03na19 200 T (°C) mb © ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration. BUK9Y19-75B Product data sheet / Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 04 — 13 April 2010 BUK9Y19-75B N-channel TrenchMOS logic level FET = 10 μ 100 μ 100 (V) DS Min Typ Max ...

Page 6

... Figure 1.5 Ω Ω °C G(ext ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 04 — 13 April 2010 BUK9Y19-75B N-channel TrenchMOS logic level FET Min Typ Max 0 1.25 1. 500 - 0. 100 - 2 100 - - ...

Page 7

... Product data sheet 003aad092 5 R (mΩ 2.8 2 (V) DS Fig 7. 003aad097 (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 04 — 13 April 2010 BUK9Y19-75B N-channel TrenchMOS logic level FET 80 3.2 2.6 2.8 3 DSon Drain-source on-state resistance as a function of drain current; typical values ( 175 ° ...

Page 8

... Fig 11. Sub-threshold drain current as a function of 03nq03 R DSON (mΩ) 100 140 180 T (°C) j Fig 13. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 04 — 13 April 2010 BUK9Y19-75B N-channel TrenchMOS logic level FET -1 -2 min typ max - ...

Page 9

... Fig 15. Input, output and reverse transfer capacitances 100 175 ° 0.2 0.4 0.6 0.8 All information provided in this document is subject to legal disclaimers. Rev. 04 — 13 April 2010 BUK9Y19-75B N-channel TrenchMOS logic level FET function of drain-source voltage; typical values 003aad094 = 25 ° 1.2 V ...

Page 10

... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 04 — 13 April 2010 BUK9Y19-75B N-channel TrenchMOS logic level FET detail (1) (1) ( 5.0 3.3 6.2 ...

Page 11

... Product data sheet Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 04 — 13 April 2010 BUK9Y19-75B N-channel TrenchMOS logic level FET Supersedes BUK9Y19-75B_3 BUK9Y19-75B_2 © NXP B.V. 2010. All rights reserved ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 04 — 13 April 2010 BUK9Y19-75B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 13 April 2010 BUK9Y19-75B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 13 April 2010 Document identifier: BUK9Y19-75B ...

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