BFY640 (P) Infineon Technologies, BFY640 (P) Datasheet
BFY640 (P)
Manufacturer Part Number
BFY640 (P)
Description
RF Germanium Silicon Germanium NPN RF Transistor
Manufacturer
Infineon Technologies
Datasheet
1.BFY640B-04_P.pdf
(3 pages)
Specifications of BFY640 (P)
Emitter- Base Voltage Vebo
1.2 V
Continuous Collector Current
50 mA
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Package / Case
Micro-X
Collector- Emitter Voltage Vceo Max
4 V
Maximum Operating Frequency
40000 MHz
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Package
Micro-X
Comment
also available in (S) and (H) quality
Vceo (max)
4.0 V
Ic(max)
50.0 mA
Ptot (max)
200.0 mW
Lead Free Status / Rohs Status
No
Other names
BFY640PNZ
HiRel NPN Silicon Germanium RF Transistor
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Maximum Ratings
Thermal Resistance
Notes.:
1) For T
2) T
IFAG IMM RPD D HIR
Type
BFY640B
Parameter
Collector-emitter voltage
T
T
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Junction temperature
Operating temperature range
Storage temperature range
Junction-soldering point
a
a
HiRel Discrete and Microwave Semiconductor
High gain low noise RF transistor
High maximum stable gain: G
Noise figure F = 0.8 dB at 1.8 GHz
Noise figure F = 1.1 dB at 6 GHz
Hermetically sealed microwave package
S
> 0 °C
≤ 0 °C
is measured on the emittter lead at the soldering point to the pcb.
A
> 25°C the derating of I
1)
C
2)
has to be considered. Nomograms will be available on request.
Marking
-
ms
24dB at 1.8 GHz
Pin Configuration
C
1
Symbol
V
V
V
I
I
T
T
T
R
C
B
j
op
stg
CEO
CBO
EBO
th JS
1 of 3
E
2
Values
4.0
3.7
13
1.2
50
3
175
-65...+175
-65...+175
325
B
3
4
1
4
E
Package
Micro-X
V1, June 2010
BFY640
Unit
V
V
V
V
mA
mA
C
C
C
K/W
3
2
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BFY640 (P) Summary of contents
Page 1
HiRel NPN Silicon Germanium RF Transistor HiRel Discrete and Microwave Semiconductor High gain low noise RF transistor High maximum stable gain: G Noise figure 1.8 GHz Noise figure F = 1.1 ...
Page 2
Electrical Characteristics at T =25°C; unless otherwise specified A Parameter DC Characteristics Collector-base cutoff current Collector-emitter cutoff current 0.1 µ Emitter-base cuttoff current ...
Page 3
... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. ...