FDMS3604AS Fairchild Semiconductor, FDMS3604AS Datasheet - Page 7

• Manufacturer Part Number: FDMS3604AS
• Description: MOSFET Power 30V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3604AS

• Configuration: Dual (MOSFET)
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 8 mOhms
• Forward Transconductance Gfs (max / Min): 61 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 13 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Module Configuration: Dual
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0058ohm
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMS3604AS Rev.C4
Typical Characteristics (Q2 N-Channel)
100
100
80
60
40
20
1.6
1.4
1.2
1.0
0.8
80
60
40
20
0
0
Figure 14. On-Region Characteristics
Figure 16. Normalized On-Resistance
0.0
1.5
-75
Figure 18. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
GS
-50
= 23 A
vs Junction Temperature
= 5 V
= 10 V
0.2
2.0
V
V
T
DS
-25
GS
J
,
,
, GATE TO SOURCE VOLTAGE (V)
T
JUNCTION TEMPERATURE (
V
DRAIN TO SOURCE VOLTAGE (V)
J
GS
V
= 25
GS
T
V
V
= 3 V
J
0
GS
= 125
= 4 V
GS
V
0.4
2.5
o
GS
C
= 4.5 V
= 3.5 V
25
= 10 V
μ
o
s
C
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
0.6
3.0
T
75
J
= -55
o
100 125 150
C )
0.8
3.5
o
C
μ
s
1.0
4.0
T
J
7
= 25
o
C unlenss otherwise noted
Figure 15. Normalized on-Resistance vs Drain
0.001
0.01
100
0.1
12
10
9
6
3
0
8
6
4
2
0
1
Figure 17. On-Resistance vs Gate to
0.0
Forward Voltage vs Source Current
0
2
Figure 19. Source to Drain Diode
V
GS
Current and Gate Voltage
= 0 V
V
V
GS
T
0.2
SD
J
20
, BODY DIODE FORWARD VOLTAGE (V)
= 3 V
V
= 125
GS
I
Source Voltage
D
4
,
,
GATE TO SOURCE VOLTAGE (V)
T
DRAIN CURRENT (A)
T
o
J
C
J
0.4
T
= 125
= 25
J
= -55
40
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
o
J
o
C
= 25
C
o
0.6
C
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
I
D
C
= 23 A
V
V
60
GS
GS
= 4 V
0.8
= 3.5 V
8
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80
V
V
μ
GS
GS
1.0
s
= 10 V
= 4.5 V
μ
s
100
1.2
10