FDMS3604AS Fairchild Semiconductor, FDMS3604AS Datasheet - Page 8

• Manufacturer Part Number: FDMS3604AS
• Description: MOSFET Power 30V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3604AS

• Configuration: Dual (MOSFET)
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 8 mOhms
• Forward Transconductance Gfs (max / Min): 61 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 13 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Module Configuration: Dual
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0058ohm
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMS3604AS Rev.C4
Typical Characteristics (Q2 N-Channel)
0.01
10
50
10
200
100
0.1
1
8
6
4
2
0
0.01
10
Figure 20. Gate Charge Characteristics
1
0.01
0
I
Figure 22. Unclamped Inductive
D
THIS AREA IS
LIMITED BY r DS
SINGLE PULSE
T
R
T
J
A
Figure 24. Forward Bias Safe
= 23 A
θ
JA
= MAX RATED
= 25
= 120
0.1
10
o
V
Switching Capability
C
DS
t
AV
0.1
o
, DRAIN to SOURCE VOLTAGE (V)
T
C/W
Operating Area
, TIME IN AVALANCHE (ms)
Q
J
= 125
g
(
on
, GATE CHARGE (nC)
)
20
1
V
V
o
T
DD
C
DD
J
= 25
= 20 V
1
= 10 V
T
o
J
C
30
= 100
10
V
DD
= 15 V
o
C
10
100
40
1 ms
100 ms
10 ms
1s
DC
10s
100200
1000
50
T
J
8
= 25
o
C unless otherwise noted
1000
10000
160
120
100
1000
0.1
80
40
10
100
0
1
Figure 23. Maximun Continuous Drain
10
10
25
0.1
Figure 25. Single Pulse Maximum
-3
Figure 21. Capacitance vs Drain
Limited by Package
Current vs Case Temperature
f = 1 MHz
V
GS
10
= 0 V
50
-2
V
Power Dissipation
to Source Voltage
DS
T
V
C
GS
, DRAIN TO SOURCE VOLTAGE (V)
,
t, PULSE WIDTH (sec)
CASE TEMPERATURE (
10
= 4.5 V
-1
75
1
V
1
GS
= 10 V
100
SINGLE PULSE
R
T
10
A
θ
JA
= 25
R
o
= 120
C )
θ
JC
125
o
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C
= 2
100
o
10
C/W
o
C
C
C/W
C
oss
rss
iss
1000
150
30