FDMC8200S Fairchild Semiconductor, FDMC8200S Datasheet - Page 3

• Manufacturer Part Number: FDMC8200S
• Description: MOSFET Power 30V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC8200S

• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Forward Transconductance Gfs (max / Min): 43 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 33
• Module Configuration: Dual
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.02ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / Rohs Status: Details

FDMC8200S Rev.C4
©2011 Fairchild Semiconductor Corporation
Electrical Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3.Starting Q1: T = 25
100% test at L = 3 mH, I = 3.2 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
V
t
Q
rr
by the user's board design.
SD
rr
Symbol
θJA
is determined with the device mounted on a 1in
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
°
C, L = 1 mH, I = 5 A, Vgs = 10V, Vdd = 27V, 100% test at L = 3 mH, I = 4 A; Q2: T = 25
Parameter
c. 180 °C/W when mounted on a
a.65 °C/W when mounted on
minimum pad of 2 oz copper
a 1 in
2
T
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
pad of 2 oz copper
= 25°C unless otherwise noted
V
V
V
Q1
I
Q2
I
F
F
GS
GS
GS
= 6 A, di/dt = 100 A/s
= 8.5 A, di/dt = 300 A/s
= 0 V, I
= 0 V, I
= 0 V, I
Test Conditions
3
S
S
S
= 6 A
= 8.5 A
= 1.3 A
(Note 2)
(Note 2)
(Note 2)
θJC
Type
°
is guaranteed by design while R
C, L = 1 mH, I = 8 A, Vgs = 10V, Vdd = 27V,
Q1
Q2
Q2
Q1
Q2
Q1
Q2
d. 125 °C/W when mounted on a
b.50 °C/W when mounted on
minimum pad of 2 oz copper
a 1 in
2
Min
pad of 2 oz copper
Typ
0.8
0.8
0.6
2.3
13
20
15
www.fairchildsemi.com
θCA
Max
1.2
1.2
0.8
24
32
10
24
is determined
Units
nC
ns
V