FDMC8200S Fairchild Semiconductor, FDMC8200S Datasheet - Page 6

• Manufacturer Part Number: FDMC8200S
• Description: MOSFET Power 30V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC8200S

• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Forward Transconductance Gfs (max / Min): 43 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 33
• Module Configuration: Dual
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.02ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / Rohs Status: Details

FDMC8200S Rev.C4
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
0.003
0.01
0.1
1
2
10
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
10
-3
SINGLE PULSE
R
θ
JA
= 180
o
C/W
10
-2
t, RECTANGULAR PULSE DURATION (sec)
10
T
-1
J
6
= 25°C unless otherwise noted
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
= P
DM
x Z
P
θJC
DM
1
/t
x R
2
θJc
100
t
1
+ T
t
2
C
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