IPG20N04S4L-08 Infineon Technologies, IPG20N04S4L-08 Datasheet - Page 3

• Manufacturer Part Number: IPG20N04S4L-08
• Description: MOSFET Power N-Channel 40V MOSFET
• Manufacturer: Infineon Technologies

Specifications of IPG20N04S4L-08

• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 8.2 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 20 A
• Power Dissipation: 54 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TDSON-8
• Lead Free Status / Rohs Status: Details
• Other names: IPG20N04S4L08XT

Rev. 1.0
1)
2)
3)
connection. PCB is vertical in still air.
4)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
one channel active
Diode pulse current
one channel active
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Current is limited by bondwire; with an R
Specified by design. Not subject to production test.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
Per channel
4)
4)
2)
2)
2, 4)
2)
4)
2, 4)
2)
Symbol
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
thJC
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
=2.8 K/W the chip is able to carry 66A at 25°C.
V
f =1 MHz
V
I
V
V
T
V
T
V
di
D
C
j
GS
DD
DD
GS
GS
R
=20 A, R
=25 °C
F
page 3
=25 °C
=20 V, I
/dt =100 A/µs
=0 V, V
=20 V, V
=32 V, I
=0 to 10 V
=0 V, I
Conditions
F
F
G
2
DS
=17 A,
=I
D
=11 W
(one layer, 70 µm thick) copper area for drain
GS
=20 A,
=25 V,
S
=10 V,
,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
2350
typ.
440
6.5
3.2
2.8
0.9
20
40
20
30
34
30
7
3
-
-
IPG20N04S4L-08
max.
3050
570
8.5
7.4
1.3
46
39
20
80
-
-
-
-
-
-
-
2010-10-05
Unit
pF
ns
nC
V
A
V
ns
nC