PSMN1R5-40ES,127 NXP Semiconductors, PSMN1R5-40ES,127 Datasheet - Page 3

• Manufacturer Part Number: PSMN1R5-40ES,127
• Description: MOSFET Power N-Ch 40V 1.6 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN1R5-40ES,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: I2PAK
• Gate Charge Qg: 133 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 136nC @ 10V
• Input Capacitance (ciss) @ Vds: 9710pF @ 20V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065161127

NXP Semiconductors
PSMN1R5-40ES
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
I
D
D
10
10
10
10
350
300
250
200
150
100
10
50
-1
4
3
2
1
0
10
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
Limit R
(1)
100
DS on
= V
DS
/ I
150
D
All information provided in this document is subject to legal disclaimers.
T
003a a f329
mb
1
(°C)
200
Rev. 01 — 19 April 2011
N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK.
Fig 2.
P
(%)
DC
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
50
PSMN1R5-40ES
100
V
DS
(V)
t
100 μ s
1 ms
10 ms
100 ms
p
150
=10 μ s
© NXP B.V. 2011. All rights reserved.
T
003a a f328
mb
03aa16
(°C)
10
200
2
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