PSMN1R5-40PS,127 NXP Semiconductors, PSMN1R5-40PS,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN1R5-40PS,127
• Description: MOSFET Power N-Ch 40V 1.6 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN1R5-40PS,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 133 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 136nC @ 10V
• Input Capacitance (ciss) @ Vds: 9710pF @ 20V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065167127

NXP Semiconductors
Table 6.
[1]
PSMN1R5-40PS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
SD
r
Measured 3 mm from package.
(S)
g
200
150
100
fs
50
0
drain current; typical values
Forward transconductance as a function of
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
15
…continued
30
45
All information provided in this document is subject to legal disclaimers.
003aaf316
I
D
(A)
Conditions
I
see
I
V
I
V
S
S
S
60
GS
GS
Rev. 02 — 19 April 2011
= 25 A; V
= 25 A; dI
= 25 A; dI
Figure 17
= 0 V; V
= 0 V; V
N-channel 40 V 1.6 mΩ standard level MOSFET in TO220.
GS
S
S
DS
DS
/dt = -100 A/µs;
/dt = -100 A/µs;
= 0 V; T
Fig 6.
= 20 V
= 20 V; T
(A)
I
D
75
60
45
30
15
0
j
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
= 25 °C;
0
j
= 25 °C
2
PSMN1R5-40PS
T
j
= 175 ° C
Min
-
-
-
4
Typ
0.8
64
117
V
© NXP B.V. 2011. All rights reserved.
T
GS
003aaf317
j
= 25 ° C
(V)
Max
1.2
-
-
6
Unit
V
ns
nC
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