PSMN1R2-30YLC,115 NXP Semiconductors, PSMN1R2-30YLC,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN1R2-30YLC,115
• Description: MOSFET Power N-Ch 30V 1.25mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN1R2-30YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.25 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 215 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 78 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.25 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 5093pF @ 15V
• Power - Max: 215W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065187115

NXP Semiconductors
PSMN1R2-30YLC
Product data sheet
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(S )
g
(A)
I
10
10
10
10
10
10
300
250
200
150
100
D
fs
50
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
25
Min
1
Typ
50
Max
2
75
N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower
V
All information provided in this document is subject to legal disclaimers.
GS
003a a f 562
003a a f 561
I
D
(V)
(A)
100
3
Rev. 1 — 3 May 2011
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS (th)
(V)
(A)
I
100
D
80
60
40
20
3
2
1
0
0
-60
function of gate-source voltage
junction temperature
Transfer characteristics; drain current as a
0
Max (1mA)
Min (5mA)
T
j
0
1
= 150 °C
PSMN1R2-30YLC
I
D
=5mA
60
2
1mA
T
j
= 25 °C
120
3
© NXP B.V. 2011. All rights reserved.
003a a f 560
003a a f 564
V
T
GS
j
( C)
(V)
180
4
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