SIA429DJT-T1-GE3 Vishay

SIA429DJT-T1-GE3

Manufacturer Part Number

SIA429DJT-T1-GE3

Description

MOSFET Power P-Channel 20 V (D-S)

Manufacturer

Vishay

Specifications of SIA429DJT-T1-GE3

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.0205 Ohms

Forward Transconductance Gfs (max / Min)

30 S

Drain-source Breakdown Voltage

- 20 V

Continuous Drain Current

- 12 A

Power Dissipation

19 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SC-70

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SIA429DJT-T1-GE3

Manufacturer:

VISHAY

Quantity:

3 385

Company:

Meier Automation Equipment Co., Limited

Part Number:

SIA429DJT-T1-GE3

Manufacturer:

CJ/长电

Quantity:

20 000

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