SIA429DJT Vishay Siliconix, SIA429DJT Datasheet

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SIA429DJT

Manufacturer Part Number
SIA429DJT
Description
P-Channel 20 V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIA429DJT-T1-GE3
Manufacturer:
VISHAY
Quantity:
3 385
Part Number:
SIA429DJT-T1-GE3
Manufacturer:
CJ/长电
Quantity:
20 000
www.DataSheet4U.com
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 67038
S10-2538-Rev. A, 08-Nov-10
Thin PowerPAK SC-70-6L-Single
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
- 20
(V)
0.0205 at V
0.027 at V
0.036 at V
0.060 at V
R
DS(on)
GS
GS
GS
GS
= - 2.5 V
= - 1.8 V
= - 1.5 V
()
J
= - 4.5 V
= 150 °C)
b, f
P-Channel 20 V (D-S) MOSFET
Ordering Information: SiA429DJT-T1-GE3 (Lead (Pb)-free and Halogen-free)
I
- 12
- 12
- 12
D
Part # code
- 4
(A)
a
a
a
d, e
A
Q
= 25 °C, unless otherwise noted)
24.5 nC
Marking Code
Steady State
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
New Product
t  5 s
X X X
B P X
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Lot traceability
and Date code
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New Thermally Enhanced PowerPAK
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Load Switch and Charger Switch for Portable Devices
• DC/DC Converter
Symbol
Symbol
T
R
R
Definition
SC-70 Package
- Small Footprint Area
- Ultra-Thin 0.6 mm height
- Low On-Resistance
J
V
V
I
thJA
thJC
P
, T
DM
I
I
GS
DS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
5.3
28
- 55 to 150
- 10.6
- 8.5
- 2.9
Limit
3.5
2.2
- 12
- 12
- 12
- 20
- 30
260
± 8
19
12
b, c
b, c
b, c
b, c
a
a
b, c
a
Maximum
6.5
36
Vishay Siliconix
SiA429DJT
®
G
P-Channel MOSFET
www.vishay.com
°C/W
Unit
Unit
S
D
°C
W
V
A
1

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SIA429DJT Summary of contents

Page 1

... Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch and Charger Switch for Portable Devices • DC/DC Converter Marking Code Part # code Lot traceability and Date code Ordering Information: SiA429DJT-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted) A Symbol °C ...

Page 2

... SiA429DJT Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... 1.5 2.0 2 SiA429DJT Vishay Siliconix ° 125 ° ° 0.0 0.4 0.8 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 3500 3000 2500 2000 C iss 1500 1000 ...

Page 4

... SiA429DJT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 T = 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Soure-Drain Diode Forward Voltage 0.8 0.7 0.6 0.5 0.4 0.3 0 Temperature (°C) J Threshold Voltage www.DataSheet4U.com www.vishay.com 4 New Product °C J 0.8 1.0 1 250 μ 100 125 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. www.DataSheet4U.com Document Number: 67038 S10-2538-Rev. A, 08-Nov-10 New Product 75 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SiA429DJT Vishay Siliconix 100 125 T - Case Temperature (° ...

Page 6

... SiA429DJT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 www.DataSheet4U.com Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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