FDMS7620S Fairchild Semiconductor, FDMS7620S Datasheet - Page 3

• Manufacturer Part Number: FDMS7620S
• Description: MOSFET Power 30V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS7620S

• Configuration: Dual (MOSFET)
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Forward Transconductance Gfs (max / Min): 22 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 10.1 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Module Configuration: Dual
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0152ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / Rohs Status: Details

FDMS7620S Rev.C1
©2011 Fairchild Semiconductor Corporation
Electrical Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
4. Q1: E
V
t
Q
rr
by the user's board design.
Q2: E
SD
rr
Symbol
θJA
is determined with the device mounted on a 1 in
AS
AS
of 9 mJ is based on starting T
of 21 mJ is based on starting T
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
J
J
= 25
= 25
c. 125 °C/W when mounted on a
a. 57 °C/W when mounted on
minimum pad of 2 oz copper
a 1 in
o
o
C, L = 0.3 mH, I
C, L = 0.3 mH, I
2
pad of 2 oz copper
T
2
J
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
= 25°C unless otherwise noted
AS
AS
= 8 A, V
= 12 A, V
V
V
Q1
I
Q2
I
F
F
GS
GS
= 10.1 A, di/dt = 100 A/s
= 12.4 A, di/dt = 300 A/s
DD
= 0 V, I
= 0 V, I
DD
= 27 V, V
= 27 V, V
Test Conditions
S
S
3
GS
= 10.1 A
= 12.4 A
GS
= 10 V. 100% test at L = 3 mH, I
= 10 V. 100% test at L = 3 mH, I
(Note 2)
(Note 2)
d. 120 °C/W when mounted on a
b. 50 °C/W when mounted on
minimum pad of 2 oz copper
a 1 in
θJC
2
Type
AS
is guaranteed by design while R
pad of 2 oz copper
Q1
Q2
Q1
Q2
Q1
Q2
AS
= 2.0 A, V
= 3.2A, V
Min
DD
DD
= 0 V, V
= 0 V,V
0.90
0.83
Typ
16
18
13
GS
4
GS
= 15 V.
= 15 V..
www.fairchildsemi.com
θCA
Max
1.2
1.2
28
32
10
23
is determined
Units
nC
ns
V