FDMS7620S Fairchild Semiconductor, FDMS7620S Datasheet - Page 8

• Manufacturer Part Number: FDMS7620S
• Description: MOSFET Power 30V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS7620S

• Configuration: Dual (MOSFET)
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Forward Transconductance Gfs (max / Min): 22 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 10.1 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Module Configuration: Dual
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0152ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / Rohs Status: Details

FDMS7620S Rev.C1
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
10
30
10
0.001
8
6
4
2
0
1
0
Figure 19. Gate Charge Characteristics
1000
100
I
D
0.1
10
= 12.4 A
10
1
Figure 21. Unclamped Inductive
-4
0.01
t
AV
5
Switching Capability
, TIME IN AVALANCHE (ms)
Q
V
DD
g
, GATE CHARGE (nC)
= 10 V
10
V
T
0.1
J
DD
= 125
-3
10
= 20 V
V
o
DD
T
C
J
= 15 V
= 25
1
o
Figure 23. Single Pulse Maximum Power
C
15
T
J
10
= 100
-2
10
o
C
t, PULSE WIDTH (sec)
20
30
10
Dissipation
-1
8
T
J
= 25°C unless otherwise noted
3000
1000
0.01
100
0.1
70
10
10
1
1
0.01
0.1
f = 1 MHz
V
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
Figure 20. Capacitance vs Drain
GS
J
A
Figure 22. Forward Bias Safe
θ
JA
= MAX RATED
= 25
= 0 V
= 120
V
V
DS
DS
o
0.1
C
, DRAIN to SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
to Source Voltage
o
C/W
DS
Operating Area
10
(
on
)
1
1
100
SINGLE PULSE
R
θ
JA
10
= 120
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10
o
10 ms
100
1 ms
100 ms
C/W
1s
DC
10s
C
C
C
rss
iss
oss
μ
100200
s
1000
30