PTFA261702E V1 Infineon Technologies

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PTFA261702E V1

Manufacturer Part Number

PTFA261702E V1

Description

MOSFET Power RFP-LDMOS GOLDMOS 8

Manufacturer

Infineon Technologies

Specifications of PTFA261702E V1

Configuration

Dual

Resistance Drain-source Rds (on)

0.08 Ohms

Drain-source Breakdown Voltage

65 V

Gate-source Breakdown Voltage

- 0.5 V, + 12 V

Power Dissipation

643 W

Maximum Operating Temperature

+ 200 C

Mounting Style

SMD/SMT

Package / Case

30275

Minimum Operating Temperature

- 40 C

Lead Free Status / Rohs Status

Details

Other names

FA261702EV1XP

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