SIR662DP-T1-GE3 Vishay

SIR662DP-T1-GE3

Manufacturer Part Number

SIR662DP-T1-GE3

Description

MOSFET Power 60V 60A 104W 2.7mohm @ 10V

Manufacturer

Vishay

Specifications of SIR662DP-T1-GE3

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0027 Ohms, 0.0035 Ohms

Forward Transconductance Gfs (max / Min)

93 S

Drain-source Breakdown Voltage

60 V

Continuous Drain Current

28.6 A, 35.8 A, 60 A

Power Dissipation

104 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

PowerPAK SO-8

Gate Charge Qg

64 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SIR662DP-T1-GE3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

H&T Electronics

Part Number:

SIR662DP-T1-GE3

Quantity:

3 000

Company:

H&T Electronics

Part Number:

SIR662DP-T1-GE3

Quantity:

70 000

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