sir662dp Vishay, sir662dp Datasheet

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sir662dp

Manufacturer Part Number
sir662dp
Description
N-channel 60 V D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
sir662dp-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
sir662dp-T1-GE3
Quantity:
3 000
Company:
Part Number:
sir662dp-T1-GE3
Quantity:
70 000
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 54 °C/W.
Document Number: 65253
S11-0246-Rev. A, 14-Feb-11
Ordering Information: SiR662DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
V
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
60
(V)
8
6.15 mm
D
7
D
0.0035 at V
0.0027 at V
6
D
PowerPAK
5
R
Bottom View
DS(on)
D
GS
GS
()
1
J
®
= 4.5 V
= 10 V
= 150 °C)
S
b, f
SO-8
2
S
N-Channel 60 V (D-S) MOSFET
3
S
5.15 mm
4
G
I
D
60
60
(A)
a
d, e
A
Q
= 25 °C, unless otherwise noted)
Steady State
g
30 nC
T
T
T
L =0.1 mH
T
T
T
T
T
T
T
(Typ.)
C
C
C
C
C
A
A
A
A
A
t  10 s
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Low Q
• Compliant to RoHS Directive 2002/95/EC
• Primary Side Switch
• POL
• Synchronous Rectifier
• DC/DC Converter
• Amusement System
• Industrial
• LED Backlighting
Symbol
Symbol
T
R
R
Definition
J
V
V
E
I
I
P
, T
I
DM
thJC
I
AS
thJA
DS
GS
AS
D
S
D
stg
g
for High Efficiency
g
Tested
®
Power MOSFET
Typical
0.9
15
- 55 to 150
35.8
28.6
6.25
5.6
4.0
Limit
± 20
66.6
100
104
260
60
60
60
60
40
80
b, c
b, c
a
a
b, c
b, c
a
b, c
Maximum
1.2
20
Vishay Siliconix
G
SiR662DP
N-Channel MOSFET
www.vishay.com
°C/W
Unit
Unit
D
S
mJ
°C
W
V
A
1

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sir662dp Summary of contents

Page 1

... Bottom View Ordering Information: SiR662DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... SiR662DP Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... 1.5 2.0 2.5 5000 4000 3000 2000 1000 2.0 1.7 1 1.1 0.8 0 SiR662DP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...

Page 4

... SiR662DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 150 ° 0 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0.2 - 0 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.015 0.012 0.009 0.006 = 25 °C 0.003 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 3.0 2.4 1.8 1.2 0.6 0.0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiR662DP Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... SiR662DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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