PSMN3R5-80ES,127 NXP Semiconductors, PSMN3R5-80ES,127 Datasheet - Page 10

• Manufacturer Part Number: PSMN3R5-80ES,127
• Description: MOSFET Power N-Ch 80V 3.5 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN3R5-80ES,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: I2PAK
• Gate Charge Qg: 135 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 139nC @ 10V
• Input Capacitance (ciss) @ Vds: 9961pF @ 40V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065163127

NXP Semiconductors
PSMN3R5-80ES
Product data sheet
Fig 17. Source current as a function of source-drain voltage; typical values
(A)
I
25
S
20
15
10
5
0
0
All information provided in this document is subject to legal disclaimers.
T
j
= 175 ° C
0.25
Rev. 02 — 19 April 2011
N-channel 80 V, 3.5 mΩ standard level MOSFET in I2PAK
0.5
0.75
T
j
= 25 ° C
003aaf611
V
SD
(V)
1
PSMN3R5-80ES
© NXP B.V. 2011. All rights reserved.
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