IPB051NE8N G Infineon Technologies

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IPB051NE8N G

Manufacturer Part Number

IPB051NE8N G

Description

MOSFET Power OptiMOS 2 PWR TRANST 85V 100A

Manufacturer

Infineon Technologies

Specifications of IPB051NE8N G

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0051 Ohms

Drain-source Breakdown Voltage

85 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

100 A

Power Dissipation

300 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

TO-263

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

Other names

IPB051NE8NGXT

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