IXFT15N100 IXYS, IXFT15N100 Datasheet - Page 3
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IXFT15N100
Manufacturer Part Number
IXFT15N100
Description
MOSFET Power 15 Amps 1000V 0.7 Rds
Manufacturer
IXYS
Datasheet
1.IXFT15N100.pdf
(4 pages)
Specifications of IXFT15N100
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.7 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TO-268
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
15
Rds(on), Max, Tj=25°c, (?)
0.70
Ciss, Typ, (pf)
4500
Qg, Typ, (nc)
220
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
357
Rthjc, Max, (ºc/w)
0.35
Package Style
TO-268
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFT15N100Q
Manufacturer:
IXYS
Quantity:
300
Company:
Part Number:
IXFT15N100Q
Manufacturer:
IXYS
Quantity:
15 500
© 2000 IXYS All rights reserved
2.0
1.8
1.6
1.4
1.2
1.0
0.8
20
16
12
20
16
12
8
4
0
8
4
0
-50
Fig.3 R
Fig.5 Drain Current vs. Case Temperature
0
0
Fig.1 Output Characteristics
T
V
J
-25
GS
= 25
IXF_14N100
= 10V
IXF_15N100
DS(on)
4
3
O
C
0
vs. Drain Current
T
I
V
25
D
C
T
V
GS
8
6
J
- Amperes
- Degrees C
DS
= 125
= 9V
8V
7V
6V
- Volts
T
50
J
O
= 25
C
12
9
O
75
C
100 125 150
12
16
5V
4V
20
15
IXFH14N100
IXFH15N100
14
12
10
2.2
2.0
1.8
1.6
1.4
1.2
1.0
16
12
8
6
4
2
0
8
4
0
2.0
25
Fig.4
Fig.6
0
Fig.2
IXFT14N100
IXFT15N100
temperature
T
T
2.5
J
J
= 125
= 125
V
Temperature Dependence of Drain
to Source Resistance
Input admittance
50
Output characteristics at elevated
4
GS
= 10V
O
o
C
C
3.0
T
J
V
V
75
8
- Degrees C
GS
DS
I
D
I
3.5
D
= 15A
- Volts
V
- Volts
= 7.5A
GS
= 9V
100
8V
7V
6V
12
IXFX15N100
IXFX14N100
4.0
T
125
J
16
= 25
4.5
o
C
4V
5V
3 - 4
5.0
150
20