IXFT15N100 IXYS, IXFT15N100 Datasheet - Page 3

• Manufacturer Part Number: IXFT15N100
• Description: MOSFET Power 15 Amps 1000V 0.7 Rds
• Manufacturer: IXYS

Specifications of IXFT15N100

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.7 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-268
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 15
• Rds(on), Max, Tj=25°c, (?): 0.70
• Ciss, Typ, (pf): 4500
• Qg, Typ, (nc): 220
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 357
• Rthjc, Max, (ºc/w): 0.35
• Package Style: TO-268
• Lead Free Status / Rohs Status: Details

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2.0
1.8
1.6
1.4
1.2
1.0
0.8
20
16
12
20
16
12
8
4
0
8
4
0
-50
Fig.3 R
Fig.5 Drain Current vs. Case Temperature
0
0
Fig.1 Output Characteristics
T
V
J
-25
GS
= 25
IXF_14N100
= 10V
IXF_15N100
DS(on)
4
3
O
C
0
vs. Drain Current
T
I
V
25
D
C
T
V
GS
8
6
J
- Amperes
- Degrees C
DS
= 125
= 9V
8V
7V
6V
- Volts
T
50
J
O
= 25
C
12
9
O
75
C
100 125 150
12
16
5V
4V
20
15
IXFH14N100
IXFH15N100
14
12
10
2.2
2.0
1.8
1.6
1.4
1.2
1.0
16
12
8
6
4
2
0
8
4
0
2.0
25
Fig.4
Fig.6
0
Fig.2
IXFT14N100
IXFT15N100
temperature
T
T
2.5
J
J
= 125
= 125
V
Temperature Dependence of Drain
to Source Resistance
Input admittance
50
Output characteristics at elevated
4
GS
= 10V
O
o
C
C
3.0
T
J
V
V
75
8
- Degrees C
GS
DS
I
D
I
3.5
D
= 15A
- Volts
V
- Volts
= 7.5A
GS
= 9V
100
8V
7V
6V
12
IXFX15N100
IXFX14N100
4.0
T
125
J
16
= 25
4.5
o
C
4V
5V
3 - 4
5.0
150
20