IXFT15N100 IXYS, IXFT15N100 Datasheet - Page 4
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IXFT15N100
Manufacturer Part Number
IXFT15N100
Description
MOSFET Power 15 Amps 1000V 0.7 Rds
Manufacturer
IXYS
Datasheet
1.IXFT15N100.pdf
(4 pages)
Specifications of IXFT15N100
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.7 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TO-268
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
15
Rds(on), Max, Tj=25°c, (?)
0.70
Ciss, Typ, (pf)
4500
Qg, Typ, (nc)
220
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
357
Rthjc, Max, (ºc/w)
0.35
Package Style
TO-268
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFT15N100Q
Manufacturer:
IXYS
Quantity:
300
Company:
Part Number:
IXFT15N100Q
Manufacturer:
IXYS
Quantity:
15 500
© 2000 IXYS All rights reserved
12
10
0.01
8
6
4
2
0
40
32
24
16
0.1
8
0
0
0.4
1
10
Fig.9 Source current vs Source drain voltage.
Fig.7 Gate Charge Characteristic Curve
Fig.10 Transient Thermal Impedance
-3
40
V
Vds=300V
DS
0.6
I
I
I
I
D
D
G
G
=30A
=10mA
= 500V
= 7.5A
= 10mA
80
T
Gate Charge - nC
J
= 125
0.8
120
V
O
SD
C
- Volts
1.0
160
10
T
1.2
200
J
= 25
-2
O
C
240
1.4
280
1.6
Pulse Width - Seconds
IXFH14N100
IXFH15N100
10
-1
5000
2500
1000
500
250
100
0
Fig.8
5
IXFT14N100
IXFT15N100
10
Capacitance Curves
Coss
Crss
Ciss
15
V
10
DS
0
- Volts
20
Single pulse
25
IXFX15N100
IXFX14N100
f = 1MHz
30
35
40
4 - 4
10
1