IPD50N06S3-09 Infineon Technologies
![MOSFET Power OPTIMOS-T N-CH 55V 50A 9.0mOhms](/photos/16/8/160879/to252-3-11_sml.jpg)
IPD50N06S3-09
Manufacturer Part Number
IPD50N06S3-09
Description
MOSFET Power OPTIMOS-T N-CH 55V 50A 9.0mOhms
Manufacturer
Infineon Technologies
Specifications of IPD50N06S3-09
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
9 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
107 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Other names
IPD50N06S309XT