2SK2399(Q) Toshiba
2SK2399(Q)
Manufacturer Part Number
2SK2399(Q)
Description
MOSFET Power N-Ch 100V 5A 0.17 ohm
Manufacturer
Toshiba
Specifications of 2SK2399(Q)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.23 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5 A
Power Dissipation
20 W
Maximum Operating Temperature
+ 150 C
Package / Case
SC-64
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
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