IRFS840B Fairchild Semiconductor, IRFS840B Datasheet - Page 3

• Manufacturer Part Number: IRFS840B
• Description: MOSFET Power 500V N-Channel B-FET
• Manufacturer: Fairchild Semiconductor

Specifications of IRFS840B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.65 Ohms
• Forward Transconductance Gfs (max / Min): 7.3 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 44 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
3000
2500
2000
1500
1000
500
10
3.0
2.5
2.0
1.5
1.0
0.5
10
10
0
-1
10
1
0
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
5
V
V
DS
DS
10
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
I
10
D
, Drain Current [A]
0
0
C
C
C
iss
rss
oss
15
V
GS
V
= 20V
GS
= 10V
20
C
C
C
 Notes :
iss
oss
rss
1. 250 s Pulse Test
2. T
10
10
= C
= C
= C
 Note : T
1
1
C
gs
gd
ds
= 25
+ C
+ C
 Notes :
gd
1. V
2. f = 1 MHz
25
gd
(C
J
GS
ds
= 25 
= shorted)
= 0 V
30
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.2
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
25
150
Figure 2. Transfer Characteristics
o
C
5
o
Variation with Source Current
C
0.4
150
10
4
0.6
V
V
and Temperature
Q
GS
SD
15
G
V
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
25
DS
-55
V
= 400V
o
DS
C
0.8
V
= 250V
20
DS
= 100V
6
25
1.0
30
1.2
 Notes :
 Notes :
1. V
2. 250 s Pulse Test
1. V
2. 250 s Pulse Test
 Note : I
8
DS
GS
35
= 40V
= 0V
D
1.4
= 8.0 A
40
Rev. A, November 2001
1.6
10
45