IRFS840B Fairchild Semiconductor, IRFS840B Datasheet - Page 4

• Manufacturer Part Number: IRFS840B
• Description: MOSFET Power 500V N-Channel B-FET
• Manufacturer: Fairchild Semiconductor

Specifications of IRFS840B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.65 Ohms
• Forward Transconductance Gfs (max / Min): 7.3 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 44 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9-1. Maximum Safe Operating Area
10
10
10
1.2
1.1
1.0
0.9
0.8
10
10
10
8
6
4
2
0
-100
-1
-2
25
2
1
0
Figure 7. Breakdown Voltage Variation
10
0
Figure 10. Maximum Drain Current
-50
50
vs Case Temperature
T
V
vs Temperature
J
T
, Junction Temperature [
DS
C
10
0
, Drain-Source Voltage [V]
, Case Temperature [  ]
for IRF840B
Operation in This Area
is Limited by R
1
 Notes :
75
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
50
DS(on)
o
C
o
C
100
DC
100
10 ms
10
(Continued)
2
o
C]
 Notes :
1 ms
1. V
2. I
D
125
G S
100 s
= 250  A
= 0 V
150
10 s
150
200
10
3
Figure 9-2. Maximum Safe Operating Area
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
10
-1
-2
-100
2
1
0
10
0
Figure 8. On-Resistance Variation
-50
T
V
vs Temperature
J
DS
, Junction Temperature [
10
for IRFS840B
0
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
1
 Notes :
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
50
o
DS(on)
DC
C
o
C
100 ms
10 ms
100
10
o
2
C]
1 ms
100 s
 Notes :
1. V
2. I
150
D
GS
= 4.0 A
= 10 V
Rev. A, November 2001
200
10
3