BUK7508-55A NXP Semiconductors, BUK7508-55A Datasheet - Page 8

• Manufacturer Part Number: BUK7508-55A
• Description: MOSFET Power RAIL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK7508-55A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 126 A
• Power Dissipation: 254 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7508-55A,127

NXP Semiconductors
BUK7508-55A
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
(A)
DSon
I
D
100
80
60
40
20
25
20
15
10
0
5
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
20
V
GS
2
= 5.5 (V)
T
40
j
= 175 °C
60
4
80
6
10
T
j
= 25 °C
6
7.5
All information provided in this document is subject to legal disclaimers.
V
100
GS
I
D
03nh43
03nh46
(V)
6.5
(A)
7
120
9
8
Rev. 03 — 14 June 2010
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
1.5
0.5
a
5
4
3
2
1
0
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS standard level FET
0
0
BUK7508-55A
60
60
max
min
typ
120
120
© NXP B.V. 2010. All rights reserved.
T
T
j
j
03ne89
(°C)
( ° C)
03aa32
180
180
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