2SK2776(Q) Toshiba
2SK2776(Q)
Manufacturer Part Number
2SK2776(Q)
Description
MOSFET Power MOSFET N-Ch 500V 8A Rdson=0.85Ohm
Manufacturer
Toshiba
Specifications of 2SK2776(Q)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.85 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
65 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-59
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
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