BLA1011-300 NXP Semiconductors, BLA1011-300 Datasheet - Page 7

• Manufacturer Part Number: BLA1011-300
• Description: MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLA1011-300

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-957
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Details
• Other names: BLA1011-300,112

NXP Semiconductors
BLA1011-300_2
Product data sheet
Table 9.
To ensure good power supply of the device, adding an electrolytic capacitor close to the supply con-
nection of the circuit may be required. The actual capacitor value may differ depending on the pulse
format, the quality of the power supply and the length of the connecting wires to the power supply. In
general a value of 470 F will be sufficient.
[1]
[2]
Component Description
R2
T1
T2
T3
T4
T5
T6
T7
T8
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
List of components (see
metal film resistor
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Rev. 02 — 5 February 2008
Figure
6)
…continued
Value
49.9
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-
-
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Avionics LDMOS transistors
BLA1011-300
Remarks
(W
(W
(W
(W
(W
(W
(W
(W
L) 5 mm
L) 1.25 mm
L) 15 mm
L) 40 mm
L) 1 mm
L) 4.95 mm
L) 9.4 mm
L) 12 mm
© NXP B.V. 2008. All rights reserved.
9 mm
6.25 mm
11 mm
16.8 mm
2.45 mm
3 mm
7.5 mm
3.55 mm
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