PSMN4R1-30YLC,115 NXP Semiconductors, PSMN4R1-30YLC,115 Datasheet
PSMN4R1-30YLC,115
Specifications of PSMN4R1-30YLC,115
Related parts for PSMN4R1-30YLC,115
PSMN4R1-30YLC,115 Summary of contents
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... PSMN4R1-30YLC N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 2 May 2011 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...
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... see DS see Figure 15 Simplified outline SOT669 (LFPAK; Power-SO8) Description plastic single-ended surface-mounted package; 4 leads Marking code 4C130L All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN4R1-30YLC Min Typ = 3.5 D Figure 14 Figure 14; Graphic symbol mbb076 ...
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... MM (JEDEC JESD22-A115 °C mb ≤ 10 µs; T pulsed ° j(init) ≤ Ω; unclamped; V sup GS see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN4R1-30YLC Min - = 20 kΩ - -20 Figure 1 - Figure ° -55 -55 - 190 - = 25 ° © NXP B.V. 2011. All rights reserved. ...
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... T (°C) mb Fig ( ( All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN4R1-30YLC 100 150 Normalized total power dissipation as a function of mounting base temperature 003a a f 914 ( © NXP B.V. 2011. All rights reserved. 03na19 200 T (° ...
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... Product data sheet N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower Limit DSon Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN4R1-30YLC 003aaf901 =10 μ 100 μ 100 (V) DS Min Typ Max - 2.14 2.34 ...
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... Figure 14; see Figure see Figure D DS see Figure MHz °C; see Figure 0.6 Ω 4 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN4R1-30YLC Min Typ Max 1.05 1.58 1. 100 - - 100 - - 100 - 4.75 5 ...
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... (mΩ) V ( 2.8 8 2.6 4 2.4 2 (V) DS Fig 7. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN4R1-30YLC Min Typ Max - 0 9.5 - 003a a f 904 © ...
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... I (A) D Fig 9. 003a a f 908 Max (V) GS Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN4R1-30YLC 100 150 ° Transfer characteristics; drain current as a function of gate-source voltage; typical values ...
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... V (V) = 3 100 I (A) D Fig 13. Normalized drain-source on-state resistance Q GD 003aaa508 Fig 15. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN4R1-30YLC 1.5 1 0 factor as a function of junction temperature ( 24V 15V ...
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... (V) DS Fig 17. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN4R1-30YLC 100 150 ° 0.3 0.6 0.9 voltage; typical values 003a a f 444 003a a f 913 = 25 ° ...
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... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN4R1-30YLC detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5 ...
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... NXP Semiconductors 9. Revision history Table 8. Revision history Document ID Release date PSMN4R1-30YLC v.1 20110502 PSMN4R1-30YLC Product data sheet N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower Data sheet status Product data sheet All information provided in this document is subject to legal disclaimers. ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN4R1-30YLC © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 PSMN4R1-30YLC © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PSMN4R1-30YLC All rights reserved. Date of release: 2 May 2011 Document identifier: PSMN4R1-30YLC ...