PSMN015-110P NXP Semiconductors, PSMN015-110P Datasheet - Page 4

• Manufacturer Part Number: PSMN015-110P
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN015-110P

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0405 Ohms
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: PSMN015-110P,127

NXP Semiconductors
PSMN015-110P_2
Product data sheet
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
I
D
10
10
10
1
3
2
1
Limit R
DSon
= V
DS
/ I
D
10
Rev. 02 — 6 October 2009
DC
N-channel TrenchMOS SiliconMAX standard level FET
10
2
100 μs
1 ms
10 ms
t
p
= 10 μs
V
DS
(V)
PSMN015-110P
03ao25
10
3
© NXP B.V. 2009. All rights reserved.
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