BSO203P H Infineon Technologies, BSO203P H Datasheet

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BSO203P H

Manufacturer Part Number
BSO203P H
Description
MOSFET Power P-KANAL
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSO203P H

Package
SO-8
Vds (max)
-20.0 V
Rds (on) (max) (@10v)
-
Rds (on) (max) (@4.5v)
21.0 mOhm
Rds (on) (max) (@2.5v)
35.0 mOhm
Lead Free Status / Rohs Status
 Details
Other names
BSO203PHXT
Rev.1.31
Features
• dual P-Channel in SO8
• Qualified according JEDEC for target applications
• 150°C operating temperature
• Super Logic Level (2.5V rated)
• Pb-free plating; RoHS compliant, Halogen-free according to IEC61249-2-21
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
BSO203P H
®
P-Power-Transistor
1)
2)
j
Package
PG-DSO-8
=25 °C, unless otherwise specified
1)
Symbol Conditions
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
203P
stg
V
V
V
V
T
I
T
JESD22-A114 HBM
D
page 1
A
A
GS
GS
GS
GS
=-8.2 A, R
=25 °C
=25 °C
=4.5 V, T
=4.5 V, T
=2.5 V, T
=2.5 V, T
GS
A
A
A
A
Lead free
Yes
V
R
I
=25 °C
=70 °C
=25 °C
=70 °C
Product Summary
=25 Ω
D
DS
DS(on),max
10 secs
Halogen free
Yes
-8.2
-6.6
-6.5
-5.2
2.0
1B (500V - 1 kV)
V
V
GS
GS
-55 ... 150
55/150/56
=4.5 V
=2.5 V
Value
-32.8
260
±12
PG-DSO-8
97
steady state
-7.0
-5.8
-5.7
-4.6
1.6
BSO203P H
-8.2
-20
21
34
Packing
dry
Unit
A
mJ
V
W
°C
°C
V
mΩ
A
2010-02-15

Related parts for BSO203P H

BSO203P H Summary of contents

Page 1

... =2 =25 ° =2 =70 ° =25 °C D,pulse A =25 Ω =-8 =25 °C tot stg JESD22-A114 HBM page 1 BSO203P mΩ =2 -8.2 A PG-DSO-8 Halogen free Packing Yes dry Value Unit 10 secs steady state -8.2 -7.0 A -6.6 -5.8 -6.5 -5.7 -5.2 -4.6 -32 ±12 V 2.0 1 ...

Page 2

... (BR)DSS 0. -100 µA GS(th - DSS T =25 ° - =150 ° - GSS =2 =-6.5 A DS(on =4 =-8 |>2 DS(on)max =-6 page 2 BSO203P H Values Unit min. typ. max K 110 - - 150 , - - 62 - -0.6 -0.9 -1 µ -100 - - -100 mΩ Ω 2010-02-15 ...

Page 3

... Symbol Conditions C iss = oss f =1 MHz C rss t d( Ω R d(off g(th = =-8 4 plateau oss =25 ° S,pulse =-8 =25 ° = /dt =100 A/µ page 3 BSO203P H Values min. typ. max. - 2500 3750 - 820 1230 - 680 1020 - 111 - - -10 -16 - -10 -16 - -26 - Unit 2010-02-15 ...

Page 4

... DS A parameter limited by on-state resistance Rev.1.31 2 Drain current I =f parameter 120 160 0 [° Max. transient thermal impedance Z =f(t thJA p parameter µs 100 µ 100 [V] DS page 4 BSO203P H ≤ 4 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 160 2010-02-15 ...

Page 5

... V 2.5V 4. Typ. transfer characteristics I =f |>2 DS(on)max parameter 150 ° 0.0 0.5 1.0 -V Rev.1.31 6 Typ. drain-source on resistance R =f(I DS(on) parameter 1. [ Typ. forward transconductance g =f 25°C 0 1.5 2.0 2.5 0 [V] GS page 5 BSO203P =25 ° 2 [A] D =25 ° [A] D 3 2010-02-15 ...

Page 6

... GS(th) 1.4 1.2 1 typ 0.8 0.6 0.4 0 100 140 -60 T [° Forward characteristics of reverse diode I =f parameter Ciss 1 10 Coss Crss [V] DS page 6 BSO203P -100 µ - 100 T [° °C 150 °C 25 °C, 98% 150 °C, 98% 0 0.5 1 1.5 V [V] SD 140 2 2010-02-15 ...

Page 7

... BR(DSS 22.5 22 21.5 21 20.5 20 19.5 19 18.5 18 -60 -20 20 Rev.1.31 14 Typ. gate charge V =f(Q GS parameter °C 6 100 °C 5 125 ° 100 1000 0 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 T [°C] j page 7 BSO203P =8.2 A pulsed gate 10V [nC] gate ate 2010-02-15 ...

Page 8

... Package Outline PG-DSO-8: Outline Footprint Dimensions in mm Rev.1.31 page 8 BSO203P H 2010-02-15 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev.1.31 page 9 BSO203P H 2010-02-15 ...

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