BSO203SP H Infineon Technologies, BSO203SP H Datasheet - Page 2

• Manufacturer Part Number: BSO203SP H
• Description: MOSFET Power P-KANAL
• Manufacturer: Infineon Technologies

Specifications of BSO203SP H

• Package: SO-8
• Vds (max): -20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): 21.0 mOhm
• Rds (on) (max) (@2.5v): 34.0 mOhm
• Lead Free Status / Rohs Status: Details
• Other names: BSO203SPHXT

Rev.1.31
1)
connection. PCB is vertical in still air.
2)
3)
Parameter
Thermal characteristics
Thermal resistance,
junction - soldering point
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
See figure 3 for more detailed information
See figure 13 for more detailed information
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJS
thJA
DS(on)
G
minimal footprint,
t
minimal footprint,
steady state
6 cm
t
6 cm
steady state
V
0.25 mA
V
V
T
V
T
V
V
V
|V
I
p
p
D
page 2
≤10 s
≤10 s
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=-7.1 A
DS
=V
= -20 V, V
= -20 V, V
=0 V, I
= -12 V, V
=2.5 V, I
=4.5 V, I
|>2|I
2
2
cooling area
cooling area
GS
, I
D
|R
D
D
= -
= -100 µA
D
D
DS(on)max
=-7 A
=-8.9 A
GS
GS
DS
=0 V,
=0 V,
=0 V
1)
1)
,
,
,
min.
-0.6
-20
18
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
-0.9
3.3
22
15
33
-
-
-
-
-
-
-
-
-
BSO203SP H
max.
-100
-100
-1.2
110
150
35
53
80
34
21
-1
-
-
-
Unit
K/W
V
µA
nA
m
S
2010-02-10