ISL9N315AD3 Fairchild Semiconductor, ISL9N315AD3 Datasheet - Page 4

• Manufacturer Part Number: ISL9N315AD3
• Description: MOSFET Power N-Ch LL UltraFET PWM Optimized
• Manufacturer: Fairchild Semiconductor

Specifications of ISL9N315AD3

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-251
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

©2003 Fairchild Semiconductor Corporation
Typical Characteristic
Figure 7. Drain to Source On Resistance vs Gate
Figure 9. Normalized Gate Threshold Voltage vs
60
40
20
0
50
40
30
20
10
1.4
1.2
1.0
0.8
0.6
0.4
1
Figure 5. Transfer Characteristics
2
-80
I
D
= 15A
Voltage and Drain Current
-40
Junction Temperature
V
V
T
GS
GS
J
T
2
= 175
J
4
, GATE TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
I
D
0
= 30A
o
C
40
T
3
6
J
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
J
= -55
(Continued)
= 25
80
V
o
GS
o
C
C
= V
120
DS
8
4
o
, I
C)
D
= 250 A
160
200
10
5
Breakdown Voltage vs Junction Temperature
60
40
20
Figure 8. Normalized Drain to Source On
0
Figure 10. Normalized Drain to Source
1.2
1.1
1.0
0.9
2.0
1.5
1.0
0.5
Resistance vs Junction Temperature
Figure 6. Saturation Characteristics
0
-80
-80
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
-40
-40
GS
0.5
V
DS
= 10V
T
T
, DRAIN TO SOURCE VOLTAGE (V)
J
J
, JUNCTION TEMPERATURE (
, JUNCTION TEMPERATURE (
0
0
1.0
40
40
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
C
= 25
80
80
1.5
ISL9N315AD3/ISL9N315AD3ST Rev.A1
o
V
C
V
V
GS
V
GS
GS
GS
120
120
= 4.5V
= 10V, I
= 3.5V
= 3.0V
o
o
C)
C)
I
2.0
D
= 250 A
160
160
D
= 30A
200
200
2.5