ISL9N315AD3 Fairchild Semiconductor, ISL9N315AD3 Datasheet - Page 6

• Manufacturer Part Number: ISL9N315AD3
• Description: MOSFET Power N-Ch LL UltraFET PWM Optimized
• Manufacturer: Fairchild Semiconductor

Specifications of ISL9N315AD3

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-251
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

©2003 Fairchild Semiconductor Corporation
Test Circuits and Waveforms
V
GS
I
g(REF)
Figure 19. Switching Time Test Circuit
Figure 17. Gate Charge Test Circuit
V
GS
R
GS
V
GS
V
DS
V
DUT
DS
R
DUT
L
R
L
(Continued)
-
+
V
-
+
DD
V
DD
I
0
0
V
V
V
g(REF)
0
0
DD
DS
GS
V
10%
GS
V
Figure 20. Switching Time Waveforms
= 1V
GS
Figure 18. Gate Charge Waveforms
t
d(ON)
90%
Q
gs
Q
50%
t
ON
g(TH)
10%
t
r
Q
PULSE WIDTH
Q
V
g(5)
DS
gd
Q
g(TOT)
V
ISL9N315AD3/ISL9N315AD3ST Rev.A1
GS
= 5V
t
d(OFF)
90%
t
OFF
50%
t
V
f
10%
GS
= 10V
90%