SI4810DY Vishay, SI4810DY Datasheet - Page 4

• Manufacturer Part Number: SI4810DY
• Description: MOSFET Power 30V 10A 2.5W
• Manufacturer: Vishay

Specifications of SI4810DY

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0135 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

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2-4
Si4810DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0001
0.001
0.01
0.1
0.1
50
10
30
10
1
1
0.01
0.0
0.1
0
2
1
10
-4
T
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Source-Drain Diode Forward Voltage
J
0.2
25
= 150_C
V
Reverse Current (Schottky)
SD
30 V
- Source-to-Drain Voltage (V)
0.4
T
20 V
50
J
- Temperature (_C)
Single Pulse
10 V
10
0.6
75
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
T
J
= 25_C
100
0.8
125
1.0
10
-2
Square Wave Pulse Duration (sec)
150
1.2
10
-1
0.10
0.08
0.06
0.04
0.02
0.00
80
60
40
20
0.01
0
0
On-Resistance vs. Gate-to-Source Voltage
2
V
GS
0.10
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
- Gate-to-Source Voltage (V)
Single Pulse Power
P
DM
JM
4
- T
Time (sec)
I
D
t
A
1
= 9.0 A
= P
t
2
DM
6
Z
1.00
thJA
thJA
S-31062—Rev. F, 26-May-03
t
t
1
2
(t)
Document Number: 70802
10
= 70_C/W
8
30
10.00
10