SI4810DY Vishay, SI4810DY Datasheet - Page 5

• Manufacturer Part Number: SI4810DY
• Description: MOSFET Power 30V 10A 2.5W
• Manufacturer: Vishay

Specifications of SI4810DY

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0135 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Document Number: 70802
S-31062—Rev. F, 26-May-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
0.1
2
1
10
-4
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
10
Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky)
-3
Single Pulse
10
-2
Square Wave Pulse Duration (sec)
10
-1
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
1
A
= P
Vishay Siliconix
t
2
DM
Z
thJA
thJA
t
t
1
2
(t)
= 80_C/W
Si4810DY
10
www.vishay.com
30
2-5