BUK7507-55B NXP Semiconductors, BUK7507-55B Datasheet - Page 8

• Manufacturer Part Number: BUK7507-55B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7507-55B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0071 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 119 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7507-55B,127

NXP Semiconductors
BUK7507-55B
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
100
(A)
DSon
I
75
50
25
25
20
15
10
D
0
5
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
V
GS
= 6 (V)
T
2
j
= 175 °C
100
6.5
7
4
7.5
T
200
j
= 25 °C
8
6
All information provided in this document is subject to legal disclaimers.
I
D
V
(A)
GS
03nn61
03nn64
(V)
10
9
300
8
Rev. 2 — 26 July 2011
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
1.5
0.5
a
5
4
3
2
1
0
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS standard level FET
0
0
BUK7507-55B
60
60
max
min
typ
120
120
© NXP B.V. 2011. All rights reserved.
T
T
j
j
03ne89
(°C)
( ° C)
03aa32
180
180
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