MTP12P10 ON Semiconductor, MTP12P10 Datasheet - Page 2

• Manufacturer Part Number: MTP12P10
• Description: MOSFET Power 100V 12A P-Channel
• Manufacturer: ON Semiconductor

Specifications of MTP12P10

• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.3 Ohms
• Forward Transconductance Gfs (max / Min): 2 S
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: No

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 1) (T
SOURCE−DRAIN DIODE CHARACTERISTICS (Note 1)
INTERNAL PACKAGE INDUCTANCE (TO−204)
INTERNAL PACKAGE INDUCTANCE (TO−220)
Drain−Source Breakdown Voltage (V
Zero Gate Voltage Drain Current
Gate−Body Leakage Current, Forward (V
Gate−Body Leakage Current, Reverse (V
Gate Threshold Voltage (V
Static Drain−Source On−Resistance (V
Drain−Source On−Voltage (V
Forward Transconductance (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Forward On−Voltage
Forward Turn−On Time
Reverse Recovery Time
Internal Drain Inductance, (Measured from the contact screw on the header closer to the
source pin and the center of the die)
Internal Source Inductance
(Measured from the source pin, 0.25″ from the package
to the source bond pad)
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
(V
(V
T
(I
(I
J
D
D
DS
DS
= 100°C
= 12 Adc)
= 6.0 Adc, T
= Rated V
= Rated V
DSS
DSS
J
= 100°C)
, V
, V
GS
GS
DS
= 0)
= 0, T
GS
= V
DS
= 10 V)
GS
= 15 V, I
J
, I
= 125°C)
GS
Characteristic
D
(V
GS
= 1.0 mA)
= 0, I
DS
GSF
GSR
(T
D
= 10 Vdc, I
(V
= 6.0 A)
= 0.8 Rated V
J
DD
D
= 25°C unless otherwise noted)
= 20 Vdc, V
= 20 Vdc, V
(V
J
= 0.25 mA)
= 25 V, I
= 100°C)
DS
= 25 V, V
(I
See Figures 12 and 13
S
D
= Rated I
= 6.0 Adc)
D
See Figure 10
See Figure 11
DS
http://onsemi.com
DSS
DS
= 0.5 Rated I
= 0)
= 0)
GS
MTP12P10
, I
D
= 0, f = 1.0 MHz)
D
= Rated I
, V
2
GS
D
= 0)
, R
D
G
, V
= 50 W)
GS
= 10 V)
V
Symbol
R
V
V
(BR)DSS
I
I
t
t
I
GSSF
GSSR
C
DS(on)
DS(on)
C
V
GS(th)
C
Q
Q
g
d(on)
d(off)
DSS
Q
t
L
L
L
L
t
on
FS
oss
t
t
SD
rss
iss
rr
gs
gd
r
f
d
s
d
s
g
4.0 (Typ)
5.0 (Typ)
3.5 (Typ)
4.5 (Typ)
7.5 (Typ)
33 (Typ)
16 (Typ)
17 (Typ)
Limited by stray inductance
(Typ)
(Typ)
12.5
Min
100
300
2.0
1.5
2.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
100
100
100
920
575
200
150
150
150
4.5
4.0
0.3
4.2
3.8
5.5
10
50
50
−
−
−
−
−
−
−
−
−
−
mhos
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
nC
nH
nH
pF
ns
ns
W