MTP12P10 ON Semiconductor, MTP12P10 Datasheet - Page 5

• Manufacturer Part Number: MTP12P10
• Description: MOSFET Power 100V 12A P-Channel
• Manufacturer: ON Semiconductor

Specifications of MTP12P10

• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.3 Ohms
• Forward Transconductance Gfs (max / Min): 2 S
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: No

R
1600
1200
800
400
PULSE GENERATOR
gen
0
0
Figure 12. Switching Test Circuit
50 W
V
Figure 10. Capacitance Variation
DS
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
10
z = 50 W
20
C
C
C
V
oss
iss
rss
in
50 W
R
L
V
T
V
f = 1 MHz
30
DD
C
GS
DUT
RESISTIVE SWITCHING
= 25°C
= 0
V
http://onsemi.com
out
MTP12P10
40
5
INPUT, V
OUTPUT, V
−10
−12
−14
−16
INVERTED
−2
−4
−6
−8
0
in
t
d(on)
0
out
10%
5
Figure 13. Switching Waveforms
10
Figure 11. Gate Charge versus
t
on
V
50%
DS
Gate−To−Source Voltage
10%
Q
15
= 30 V
g
, TOTAL GATE CHARGE (nC)
50 V
80 V
t
r
90%
PULSE WIDTH
20
25
t
d(off)
30
T
I
D
35
J
= 12 A
= 25°C
90%
40
t
50%
off
90%
t
f
45
50