MTP3055E STMicroelectronics, MTP3055E Datasheet
MTP3055E
Manufacturer Part Number
MTP3055E
Description
MOSFET Power TO-220 N-CH 60V 14A
Manufacturer
STMicroelectronics
Specifications of MTP3055E
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Forward Transconductance Gfs (max / Min)
6 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12 A
Power Dissipation
40 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220
Minimum Operating Temperature
- 65 C
Lead Free Status / Rohs Status
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MTP3055E
Manufacturer:
ST
Quantity:
5 000
Company:
Part Number:
MTP3055E
Manufacturer:
MOT/ON
Quantity:
12 500
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
July 1999
MTP3055E
Symbol
CHARACTERIZATION
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
I
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
175
APPLICATION ORIENTED
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
V
DM
V
V
T
P
I
DGR
I
DM
T
GS
s tg
DS
D
tot
( )
j
T YPE
o
C OPERATING TEMPERATURE
Drain-source Voltage (V
Drain- gate Voltage (R
G ate-source Voltage
Drain Current (continuous) at T
Drain Current (pulsed) at T
Drain Current (pulsed)
T otal Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
DS(on)
= 0.1
V
60 V
DSS
< 0.15
R
c
N - CHANNEL 60V - 0.1 - 12A TO-220
Parameter
DS(on)
GS
= 25
GS
= 20 k )
c
= 0)
o
= 100
C
c
12 A
= 25
I
D
o
C
o
C
INTERNAL SCHEMATIC DIAGRAM
STripFET
-65 to 175
TO-220
Value
175
60
60
12
48
40
9
20
MTP3055E
1
2
MOSFET
3
Un it
o
o
W
V
V
V
A
A
A
C
C
1/8
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