MTP3055E STMicroelectronics, MTP3055E Datasheet - Page 3

• Manufacturer Part Number: MTP3055E
• Description: MOSFET Power TO-220 N-CH 60V 14A
• Manufacturer: STMicroelectronics

Specifications of MTP3055E

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: No

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area
Symbo l
Symbo l
I
V
SDM
t
t
SD
d(of f)
Q
Q
d(on)
Q
I
Q
SD
t
t
t
rr
gd
r
f
gs
rr
g
( )
( )
Turn-on Time
Rise Time
Turn-off Delay T ime
Fall T ime
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Parameter
Parameter
V
R
(see test circuit)
I
V
(see test circuit)
I
I
V
D
SD
SD
DD
G
DD
DD
= 12 A
= 50
= 12 A
= 12 A
= 30 V
= 40 V
= 30 V
Test Con ditions
Test Con ditions
V
V
GS
V
I
di/dt = 100 A/ s
T
D
GS
GS
j
= 7 A
= 10 V
= 150
= 0
= 10 V
Thermal Impedance
o
C
Min.
Min.
Typ.
Typ.
0.17
20
65
70
35
15
65
7
5
Max.
Max.
2.0
12
48
MTP3055E
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
A
A
V
C
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