MTP3055E STMicroelectronics, MTP3055E Datasheet - Page 3
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MTP3055E
Manufacturer Part Number
MTP3055E
Description
MOSFET Power TO-220 N-CH 60V 14A
Manufacturer
STMicroelectronics
Specifications of MTP3055E
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Forward Transconductance Gfs (max / Min)
6 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12 A
Power Dissipation
40 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220
Minimum Operating Temperature
- 65 C
Lead Free Status / Rohs Status
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MTP3055E
Manufacturer:
ST
Quantity:
5 000
Company:
Part Number:
MTP3055E
Manufacturer:
MOT/ON
Quantity:
12 500
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area
Symbo l
Symbo l
I
V
SDM
t
t
SD
d(of f)
Q
Q
d(on)
Q
I
Q
SD
t
t
t
rr
gd
r
f
gs
rr
g
( )
( )
Turn-on Time
Rise Time
Turn-off Delay T ime
Fall T ime
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Parameter
Parameter
V
R
(see test circuit)
I
V
(see test circuit)
I
I
V
D
SD
SD
DD
G
DD
DD
= 12 A
= 50
= 12 A
= 12 A
= 30 V
= 40 V
= 30 V
Test Con ditions
Test Con ditions
V
V
GS
V
I
di/dt = 100 A/ s
T
D
GS
GS
j
= 7 A
= 10 V
= 150
= 0
= 10 V
Thermal Impedance
o
C
Min.
Min.
Typ.
Typ.
0.17
20
65
70
35
15
65
7
5
Max.
Max.
2.0
12
48
MTP3055E
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
A
A
V
C
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