M29W640GT70NA6F NUMONYX, M29W640GT70NA6F Datasheet - Page 36

• Manufacturer Part Number: M29W640GT70NA6F
• Description: 64MB FLASH MEMORY
• Manufacturer: NUMONYX

Command interface
Table 12.
1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V
4. This time does not include the pre-programming time.
5. Block erase polling cycle time (see
6. Maximum value measured at worst case conditions for both temperature and V
7. Program polling cycle time (see
36/91
Chip Erase
Block Erase (64 Kbytes)
Erase Suspend Latency Time
Program (byte or word)
Double Byte
Double Word /Quadruple Byte Program
Quadruple Word / Octuple Byte Program
Single Byte and Word Program
32-byte/16-word Program using Write to Buffer and Program
32-byte/16-word Program using Write to Buffer and Program
(V
Chip Program (byte by byte)
Chip Program (word by word)
Chip Program (Double Word/Quadruple Byte Program)
Chip Program (Quadruple Word/Octuple Byte Program)
Program Suspend Latency Time
Program/Erase Cycles (per block)
Data Retention
PP
/WP = 12 V)
Program, erase times and endurance cycles
(4)(5)
Parameter
(7)
Figure
Figure
6,
Figure 7
19).
and
M29W640GH, M29W640GL, M29W640GT, M29W640GB
Figure
19).
Symbol
t
t
WHWH2
WHWH1
CC
CC
100,000
.
Min
after 100,000 program/erase cycles.
20
Typ
180
0.5
80
10
10
10
10
10
45
80
40
20
10
(1)(2)
Max
200
400
100
400
200
200
200
200
50
50
4
(6)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(2)
cycles
years
Unit
µs
µs
µs
µs
µs
µs
µs
µs
µs
s
s
s
s
s
s