BUK7Y25-40B/C,115 NXP Semiconductors, BUK7Y25-40B/C,115 Datasheet - Page 7

• Manufacturer Part Number: BUK7Y25-40B/C,115
• Description: MOSFET N-CH 40V 35.3A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y25-40B/C,115

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 35.3A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 12.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 693pF @ 25V
• Power - Max: 59.4W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
BUK7Y25-40B
Product data sheet
Fig 6.
Fig 8.
g
(S)
(A)
I
fs
D
100
20
15
10
80
60
40
20
5
0
0
function of drain-source voltage; typical values.
drain current; typical values.
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
V
GS
(V) = 20
2
10
4
15
6
20
All information provided in this document is subject to legal disclaimers.
8
I
003aac912
003aac915
D
V
(A)
DS
(V)
6.5
5.5
10
8
7
6
5
10
30
Rev. 04 — 7 April 2010
Fig 7.
Fig 9.
R
(mΩ)
DSon
(A)
I
D
100
80
60
40
20
40
30
20
10
0
0
of drain current; typical values.
function of gate-source voltage; typical values.
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
0
0
5
N-channel TrenchMOS standard level FET
5.5
20
6
T
2
j
6.5
= 175 °C
40
7
BUK7Y25-40B
8
4
60
10
T
V
j
= 25 °C
GS
6
© NXP B.V. 2010. All rights reserved.
80
(V) = 20
003aac914
003aac917
V
GS
I
D
15
(A)
(V)
100
8
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