BUK9Y30-75B/C2,115 NXP Semiconductors, BUK9Y30-75B/C2,115 Datasheet - Page 8

• Manufacturer Part Number: BUK9Y30-75B/C2,115
• Description: MOSFET N-CH 75V 34A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y30-75B/C2,115

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 19nC @ 5V
• Input Capacitance (ciss) @ Vds: 2070pF @ 25V
• Power - Max: 85W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
BUK9Y30-75B_4
Product data sheet
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate-source voltage as a function of gate
R
(mΩ)
V
DSon
(V)
GS
60
50
40
30
20
10
5
4
3
2
1
0
T
T
of drain current; typical values
charge; typical values
0
0
j
j
= 25 °C
= 25 °C; I
V
GS
20
D
5
(V) = 3.4
= 25 A
V
V
DS
DS
= 14 V
= 60 V
40
10
3.6
3.8 4.0 5.0 10
60
15
Q
I
G
D
(A)
(nC)
03no12
03no07
80
20
Rev. 04 — 10 April 2008
Fig 13. Normalized drain-source on-state resistance
Fig 15. Input, output and reverse transfer capacitances
(pF)
2500
2000
1500
1000
C
500
a
0
10
3
2
1
0
V
a =
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
-60
GS
−1
R
= 0V ; f = 1 M H z
DSon ( 25°C )
R
-20
N-channel TrenchMOS logic level FET
DSon
C
C
C
oss
rss
iss
20
1
BUK9Y30-75B
60
100
10
V
© NXP B.V. 2008. All rights reserved.
DS
140
(V)
03nq03
T
03no13
j
(°C)
180
10
2
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