STI260N6F6 STMicroelectronics, STI260N6F6 Datasheet - Page 7

• Manufacturer Part Number: STI260N6F6
• Description: MOSFET N-CH 75V 120A I2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STI260N6F6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 183nC @ 10V
• Input Capacitance (ciss) @ Vds: 11400pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11329-5

STI260N6F6, STP260N6F6
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
V
GS(th)
(norm)
V
(V)
0.6
(V)
1.2
1.0
0.2
V
0.8
0.4
0.7
0.6
12
10
0.5
GS
0.8
0.4
0.9
1.0
SD
6
2
8
4
0
-75
0
0
Gate charge vs. gate-source
voltage
vs. temperature
characteristics
20
-25
50
V
40
I
D
DD
=120A
25
100
=30V
60
I
D
=250µA
75
150
80
T
J
=-55°C
125
100
T
J
200
=150°C
T
J
120
=25°C
175
Q
Doc ID 17467 Rev 3
g
(nC)
AM09073v1
AM09075v1
AM09077v1
I
SD
T
J
(A)
(°C)
Figure 9.
Figure 11. Normalized on resistance vs.
10000
R
1000
DS(on)
100
(norm)
(pF)
2.0
1.5
1.0
0.5
C
0
-75
0.1
Capacitance variations
temperature
-25
1
25
V
I
GS
D
f=1MHz
Electrical characteristics
=60A
=10V
75
10
125
175
V
DS
AM09074v1
AM09076v1
(V)
T
Ciss
Coss
Crss
J
(°C)
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