STI260N6F6 STMicroelectronics, STI260N6F6 Datasheet - Page 9

• Manufacturer Part Number: STI260N6F6
• Description: MOSFET N-CH 75V 120A I2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STI260N6F6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 183nC @ 10V
• Input Capacitance (ciss) @ Vds: 11400pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11329-5

STI260N6F6, STP260N6F6
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
®
packages, depending on their level of environmental compliance. ECOPACK
Doc ID 17467 Rev 3
Package mechanical data
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®