NTMFS5832NLT1G ON Semiconductor, NTMFS5832NLT1G Datasheet - Page 2

• Manufacturer Part Number: NTMFS5832NLT1G
• Description: MOSFET N-CH 40V 110A SO8 FL
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMFS5832NLT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 2700pF @ 25V
• Power - Max: 3.1W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES, CAPACITANCES & GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 4)
DRAIN−SOURCE DIODE CHARACTERISTICS
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
(T
J
= 25°C unless otherwise specified)
V
V
V
Symbol
Q
Q
V
GS(TH)
(BR)DSS
R
t
t
(BR)DSS
Q
t
t
d(OFF)
d(OFF)
C
I
C
I
d(ON)
d(ON)
GS(TH)
C
V
DS(on)
G(TOT)
G(TOT)
Q
Q
Q
DSS
GSS
V
t
g
G(TH)
T
R
RR
OSS
RSS
t
t
t
t
t
t
SD
ISS
FS
GS
GD
GP
a
b
RR
r
f
r
f
J
G
/T
http://onsemi.com
/
J
V
V
V
V
GS
GS
GS
GS
V
V
V
GS
V
V
V
2
V
= 4.5 V, V
= 4.5 V, V
V
= 10 V, V
DS
V
GS
= 0 V, f = 1 MHz, V
V
GS
V
GS
GS
I
GS
I
I
S
GS
V
DS
D
D
GS
GS
= 0 V, dIS/dt = 100 A/ms,
DS
= 5 A
= 40 V
= 4.5 V
= 10 A, R
= 10 A, R
= 0 V,
= 10 V
= 0 V,
Test Condition
= 4.5 V, V
= 10 V, V
= 0 V, V
= V
= 0 V, I
= 15 V, I
I
S
DS
DS
DS
DS
= 10 A
, I
D
= 20 V; I
GS
= 20 V; I
= 20 V; I
D
G
G
DS
DS
= 250 mA
D
= 250 mA
= 1.0 W
= 1.0 W
= ±20 V
= 20 A
= 20 V,
= 20 V,
T
T
T
T
DS
J
I
I
J
J
D
D
J
D
= 125°C
D
D
= 125°C
= 25 °C
= 25°C
= 20 A
= 20 A
= 25 V
= 20 A
= 20 A
= 20 A
Min
40
1.0
34.2
0.73
0.57
28.6
14.5
2700
Typ
12.7
23.4
360
250
8.0
5.0
6.4
3.1
5.0
2.0
8.0
3.2
1.2
13
24
27
10
18
32
14
21
25
51
±100
Max
100
1.2
3.0
4.2
6.5
1
mV/°C
mV/°C
Unit
mA
nA
mW
ns
ns
ns
nC
nC
pF
V
V
W
V
S
V