NSM46211DW6T1G ON Semiconductor, NSM46211DW6T1G Datasheet

NSM46211DW6T1G

Manufacturer Part Number

NSM46211DW6T1G

Description

TRANS NPN/NPN MONO BIAS SOT-363

Manufacturer

ON Semiconductor

Series

-r

Datasheet

1.NSM46211DW6T1G.pdf (4 pages)

Specifications of NSM46211DW6T1G

Transistor Type

1 NPN Pre-Biased, 1 NPN

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

50V, 65V

Resistor - Base (r1) (ohms)

10K

Resistor - Emitter Base (r2) (ohms)

10K

Dc Current Gain (hfe) (min) @ Ic, Vce

35 @ 5mA, 10V / 200 @ 2mA, 5V

Vce Saturation (max) @ Ib, Ic

250mV @ 300µA, 10mA / 600mV @ 5mA, 100mA

Current - Collector Cutoff (max)

500nA

Frequency - Transition

Power - Max

230mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

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NSM46211DW6T1G

Dual NPN Transistors

General Purpose NPN Transistor and

NPN Transistor with Monolithic Bias

Network

NPN bias resistor transistor with a monolithic bias network; a series

base resistor and a base-emitter resistor. This device is designed to

replace multiple transistors and resistors on customer boards by

integrating these components into a single device.

which is ideal for low power surface mount applications in space

constrained applications.

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MAXIMUM RATINGS

and Q

February, 2008 - Rev. 0

Collector‐Base Voltage

Collector‐Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous

Collector‐Base Voltage

Collector‐Emitter Voltage

Collector Current

NSM46211DW6T1G contains a single NPN transistor with a single

NSM46211DW6T1G is housed in a SC-88/SOT-363 package

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

Q1: NPN

Q2: NPN BRT, R1 = R2 = 10 k (typical)

This is a Pb-Free Device

Logic Switching

Amplification

Driver Circuits

Interface Circuits

Rating - Q2 (NPN BRT)

, - minus sign for Q

Rating - Q1 (NPN)

(PNP) omitted)

= 25°C unless otherwise noted, common for Q

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

CEO

Value

100

6.0

mAdc

Unit

Vdc

†For information on tape and reel specifications,

NSM46211DW6T1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

(Note: Microdot may be in either location)

*Date Code orientation and/or position may

vary depending upon manufacturing location.

Device

ORDERING INFORMATION

(3)

(4)

= Device Code

= Date Code*

= Pb-Free Package

MARKING DIAGRAM

http://onsemi.com

SC-88/SOT-363

CASE 419B

STYLE 1

(Pb-Free)

Package

(5)

N5 M G

SC-88

Publication Order Number:

(2)

NSM46211DW6/D

3000/Tape & Reel

Shipping

(1)

(6)

†

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NSM46211DW6T1G Summary of contents

Page 1

... General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to replace multiple transistors and resistors on customer boards by integrating these components into a single device ...

Page 2

... Collector - Emitter Saturation Voltage (I C Collector - Emitter Saturation Voltage (I C Base - Emitter Saturation Voltage ( mA Base - Emitter Saturation Voltage (I = 100 mA Base - Emitter Voltage (I = 2.0 mA Base - Emitter Voltage ( mA NSM46211DW6T1G (T = 25°C unless otherwise noted) A Symbol V (BR)CEO V (BR)CES V (BR)CBO V (BR)EBO I CBO = 150° mA 0.5 mA) V ...

Page 3

... C Collector-Emitter Saturation Voltage ( mA 0.3 mA Output Voltage ( 1.0 kW Output Voltage (off 5 0 1.0 kW Input Resistor Resistor Ratio 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% NSM46211DW6T1G (T = 25°C unless otherwise noted) A Symbol Min I - CBO I - CEO I - EBO V 50 (BR)CBO V 50 (BR)CEO CE(sat) ...

Page 4

... LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com NSM46211DW6T1G PACKAGE DIMENSIONS SC-88 (SOT-363) CASE 419B-02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI 2 ...

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