NSM46211DW6T1G ON Semiconductor, NSM46211DW6T1G Datasheet - Page 2

• Manufacturer Part Number: NSM46211DW6T1G
• Description: TRANS NPN/NPN MONO BIAS SOT-363
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NSM46211DW6T1G

• Transistor Type: 1 NPN Pre-Biased, 1 NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V, 65V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V / 200 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA / 600mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: -
• Power - Max: 230mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

1. FR-4 @ Minimum Pad of 1.45 mm
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS - Q1 (NPN)
OFF CHARACTERISTICS
ON CHARACTERISTICS
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction‐to‐Ambient
Total Device Dissipation,
Derate above 25°C
Thermal Resistance, Junction‐to‐Ambient
Junction and Storage Temperature
Collector - Emitter Breakdown Voltage
Collector - Emitter Breakdown Voltage
Collector - Base Breakdown Voltage
Emitter - Base Breakdown Voltage
Collector Cutoff Current (V
DC Current Gain
Collector - Emitter Saturation Voltage (I
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage (I
Base - Emitter Saturation Voltage
Base - Emitter Voltage (I
Base - Emitter Voltage
T
T
(I
(I
(I
(I
(I
(I
A
A
C
C
C
E
C
C
= 25°C
= 25°C
= 10 mA)
= 10 mA)
= 10 mA, V
= 10 mA)
= 10 mA, V
= 2.0 mA, V
EB
CE
CE
= 0)
= 5.0 V)
= 5.0 V)
(I
(V
C
C
Characteristic
CB
= 2.0 mA, V
= 10 mA, V
CB
Characteristic (Both Junctions Heated)
Characteristic (One Junction Heated)
= 30 V, T
= 30 V)
(I
C
C
2
, 1 oz Cu.
= 10 mA, I
= 100 mA, I
(I
CE
CE
A
C
C
= 150°C)
= 5.0 V)
= 10 mA, I
= 100 mA, I
= 5.0 V)
B
B
= 0.5 mA)
= 5.0 mA)
B
B
= 0.5 mA)
NSM46211DW6T1G
= 5.0 mA)
(T
http://onsemi.com
A
= 25°C unless otherwise noted)
2
V
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)CES
(BR)EBO
I
CE(sat)
BE(sat)
BE(on)
h
CBO
FE
Min
200
580
6.0
65
80
80
-
-
-
-
-
-
-
-
Symbol
Symbol
T
R
R
Typ
J
150
290
660
0.7
0.9
P
P
, T
-
-
-
-
-
-
-
-
-
qJA
qJA
D
D
stg
1.44 (Note 1)
180 (Note 1)
692 (Note 1)
- 55 to +150
Max
0.25
Max
Max
1.83
450
700
770
230
544
5.0
0.6
15
-
-
-
-
-
-
-
mW/°C
mW/°C
Unit
°C/W
°C/W
mV
nA
mA
Unit
Unit
mW
mW
V
V
V
V
V
V
-
°C